Semiconductor integrated circuit and memory test method

ABSTRACT

A semiconductor integrated circuit is configured to test a high-speed memory at the actual operation speed of the memory, even when the operation speed of the built-in self-test circuit of the integrated circuit is restricted. In order to test a memory operating on a first clock, the integrated circuit is provided with a first test pattern generation section, operating on a second clock, for generating test data, and a second test pattern generation section, operating on a third clock, the inverted clock of the second clock, for generating test data. Furthermore, the integrated circuit is provided with a test data selection section for selectively outputting either the test data output from the first test pattern generation section or the test data output from the second test pattern generation section depending on the signal value of the second clock, thereby inputting the test data to the memory as test data. The frequency of the second clock is lower than, for example, one half the frequency of the first clock.

This is a division of application Ser. No. 11/142,323 filed Jun. 2,2005, which is a division of application Ser. No. 10/647,506 filed Aug.26, 2003 (U.S. Pat. No. 6,917,215), of which continuation-in-partapplication Ser. No. 11/166,345 was filed Jun. 27, 2005 (U.S. Pat. No.7,295,028), all of which claim priority based on JP 2002-254181 filedAug. 30, 2002; the entire contents of Ser. Nos. 11/142,323, 10/647,506and JP 2002-254181 are incorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor integrated circuitcapable of testing a memory by carrying out a built-in self-test, andmore particularly to a semiconductor integrated circuit capable oftesting a memory operating at high speed. The present invention alsorelates to a memory test method.

2. Prior Art

In recent years, as the LSI technology progresses, the operation speedsof memories included in semiconductor integrated circuits have becomeincreasing. In order to test these memories, a built-in self-test (theso-called BIST) is generally used.

FIG. 21 shows a circuit block for carrying out a BIST. In FIG. 21,numeral 401 designates a BIST circuit, and numeral 402 designates amemory to be subjected to a BIST. A first clock (memory clock) is inputto the memory 402, and a second clock (BIST clock) is input to the BISTcircuit 401. The memory 402 is classified into an ordinary data ratememory operating in synchronization with the rising edge or the fallingedge of a clock and a double data rate memory operating insynchronization with both the rising and falling edges of the clock.

From the BIST circuit 401 to the memory 402, addresses and data areinput, and control signals, such as a write enable signal, are alsoinput. In addition, the output (Data-Out) of the memory 402 is input tothe BIST circuit 401 and an ordinary logic circuit. Furthermore, anexpected value comparison circuit inside the BIST circuit 401 comparesthe data input from the memory 402 with an expected value, therebycarrying out a pass/fail judgment.

FIG. 22 shows clock timing at the time when a BIST is carried out forthe memory 402 in the case when the memory 402 is a double data rate(DDR: Double Data Rate) memory. In addition, FIG. 22 shows the firstclock (Memory Clock), the second clock (BIST Clock) and the data output(Data-Out) of the memory 402.

The memory 402, a DDR memory, can operate in synchronization with boththe rising and falling edges of the first clock (Memory Clock). Hence,in the case when a read operation is carried out, for example, data isoutput at the rising edge of the first clock (Memory Clock) at time t1of FIG. 22, and the next data is output at the falling edge of the firstclock (Memory Clock) at time t2.

In the BIST circuit 401 for testing this kind of memory 402, by settingthe rising edges of the second clock (BIST Clock) at times t1, t2, . . ., tn, the DDR memory can be tested at its actual operation speed.

In the BIST circuit 401 for testing the high-speed memory 402, it isnecessary to increase the operation speed of the BIST circuit 401 itselfdepending on the operation speed of the memory 402.

In the case when a memory operates at the double speed of the clockfrequency, just like the above-mentioned DDR memory, or in the case whena memory that operates at very high speed is tested at its actualoperation speed, the BIST circuit itself is required to be operated atthe high speed. However, since the operation frequency of the memory isvery high, it is difficult to attain a BIST circuit capable of operatingat such a high operation frequency, thereby causing a problem ofattaining such a BIST circuit.

In addition, cells having high drive capability are required forhigh-speed operation, thereby causing a problem of increasing the areaof the BIST circuit. Furthermore, the clock frequency of the BISTcircuit is required to be raised for high-speed operation, therebycausing a problem of increasing the power consumption of the BISTcircuit.

SUMMARY OF THE INVENTION

The present invention is intended to solve the above-mentioned problems.An object of the present invention is to provide a semiconductorintegrated circuit capable of testing a high-speed memory at the actualoperation speed of the memory, even when the operation speed of the BISTcircuit of the semiconductor integrated circuit is restricted.

In addition, another object of the present invention is to provide amemory test method capable of testing a high-speed memory at its actualoperation speed, even when the operation speed of the BIST circuit isrestricted.

A semiconductor integrated circuit in accordance with a first inventioncomprises a memory operating on a first clock, a first test patterngeneration section, operating on a second clock having half thefrequency of the first clock, for generating first test data, a secondtest pattern generation section, operating on a third clock, theinverted clock of the second clock, for generating second test data, anda test data selection section for selectively outputting either thefirst or second test data being output from the first test patterngeneration section or the second test pattern generation section,respectively, depending on either the signal value of the second clockor the signal value of the third clock, thereby inputting the selectedtest data to the memory as third test data.

With this configuration, the first test pattern generation sectiongenerates the first test data depending on the second clock having halfthe frequency of the first clock supplied to the memory. In addition,the second test pattern generation section generates the second testdata depending on the third clock, the inverted clock of the secondclock. Furthermore, the test data selection section selects either thefirst or second test data depending on either the signal value of thesecond clock or the signal value of the third clock and inputs theselected test data to the memory as the third test data. Hence, evenwhen the operation speed of the first and second test pattern generationsections and the test data selection section is restricted to half theoperation speed of the memory, the memory can be tested at its actualoperation speed. Since the test can be carried out even when theoperation speed of the first and second test pattern generation sectionsand the test data selection section is low, the drive capability of theintegrated circuit can be small, whereby the area of the circuit can besmall and the power consumption of the circuit can be reduced.

A semiconductor integrated circuit in accordance with a second inventioncomprises a memory operating on a first clock, a first test patterngeneration section, operating on a second clock having half thefrequency of the first clock, for generating first test data, a secondtest pattern generation section, operating on the second clock, forgenerating second test data, and a test data selection section forselectively outputting either the first or second test data being outputfrom the first test pattern generation section or the second testpattern generation section, respectively, depending on the signal valueof the second clock, thereby inputting the selected test data to thememory as third test data.

With this configuration, the first test pattern generation sectiongenerates the first test data depending on the second clock having halfthe frequency of the first clock supplied to the memory. In addition,the second test pattern generation section generates the second testdata depending on the second clock. Furthermore, the test data selectionsection selects either the first or second test data depending on thesignal value of the second clock and inputs the selected test data tothe memory as the third test data. Hence, the second invention haseffects similar to those of the first invention.

A semiconductor integrated circuit in accordance with a third inventioncomprises a memory operating on a first clock, a test pattern generationsection, operating on a second clock having half the frequency of thefirst clock, for generating first test data, an LSB0 processing sectionfor generating second test data by adding numeric value 0 to the firsttest data generated by the test pattern generation section as the leastsignificant bit thereof, an LSB1 processing section for generating thirdtest data by adding numeric value 1 to the first test data generated bythe test pattern generation section as the least significant bitthereof, and a test data selection section for selectively outputtingeither the second or third test data being output from the LSB0processing section or the LSB1 processing section, respectively,depending on the signal value of the second clock, thereby inputting theselected test data to the memory as fourth test data.

With this configuration, the test pattern generation section generatesthe first test data depending on the second clock having half thefrequency of the first clock supplied to the memory. In addition, theLSB0 processing section generates the second test data by adding numericvalue 0 to the first test data as the least significant bit thereof, andthe LSB1 processing section generates the third test data by addingnumeric value 1 to the first test data as the least significant bitthereof. Furthermore, the test data selection section selectivelyoutputs either the second or third test data depending on the signalvalue of the second clock. Therefore, even when the operation speed ofthe test pattern generation section, the LSB0 processing section, theLSB1 processing section and the test data selection section isrestricted to half the operation speed of the memory, the memory can betested at its actual operation speed. Since the test can be carried outeven when the operation speed of the test pattern generation section,the LSB0 processing section, the LSB1 processing section and the testdata selection section is low, the drive capability of the integratedcircuit can be small, whereby the area of the circuit can be small andthe power consumption of the circuit can be reduced.

In the configuration of the above-mentioned third invention, a delaycircuit for generating a delay clock obtained by delaying the secondclock and for supplying the delay clock to the test data selectionsection may be provided.

With this configuration, since the delay clock is obtained by delayingthe second clock, a hold time can secured for the first clock, whereby atest pattern can be applied stably to the memory operating at highspeed.

A semiconductor integrated circuit in accordance with a fourth inventioncomprises a memory operating on a first clock, a test pattern generationsection, operating on a second clock having half the frequency of thefirst clock, for generating first test data, an LSB0 processing sectionfor generating second test data by adding numeric value 0 to the firsttest data generated by the test pattern generation section as the leastsignificant bit thereof, an LSB1 processing section for generating thirdtest data by adding numeric value 1 to the first test data generated bythe test pattern generation section as the least significant bitthereof, a clock selection section capable of selecting either thesecond clock or the inverted clock of the second clock, and a test dataselection section for selectively outputting either the second or thirdtest data being output from the LSB0 processing section or the LSB1processing section, respectively, depending on the output of the clockselection section, thereby inputting the selected test data to thememory as fourth test data.

With this configuration, the clock selection section selects either thesecond clock or the inverted clock of the second clock, and the testdata selection section selects either the second or third test datadepending on the selected clock. By reversing the state of the selectionby the clock selection section, the timing for selecting the second andthird test data can be reversed. As a result, the quality of a testpattern can be raised. In addition, when an address signal is suppliedas a test pattern, the increment and decrement of the address signal canbe carried out selectively. The other effects are similar to those ofthe third invention.

A semiconductor integrated circuit in accordance with a fifth inventioncomprises a memory operating on a first clock, a memory device forcapturing first output data being output from the memory insynchronization with the first clock, depending on a second clock havinghalf the frequency of the first clock, and an expected value comparisonsection, operating on the second clock, for respectively comparingsecond output data being output from the memory device and third outputdata being output from the memory immediately after the output of thefirst output data with a predetermined expected value.

With this configuration, the memory device captures the first outputdata being output from the memory in synchronization with the firstclock, depending on the inverted clock of the second clock having halfthe frequency of the first clock supplied to the memory. Then, thesecond output data being output from the memory device and the thirdoutput data being output from the memory immediately after the output ofthe first output data are respectively compared with the predeterminedexpected value depending on the second clock in the expected valuecomparison section. Therefore, even when the operation speed of thememory device and the expected value comparison section is restricted tohalf the operation speed of the memory, the memory can be tested at itsactual operation speed. Since the test can be carried out even when theoperation speed of the memory device and the expected value comparisonsection is low, the drive capability of the integrated circuit can besmall, whereby the area of the circuit can be small and the powerconsumption of the circuit can be reduced.

A semiconductor integrated circuit in accordance with a sixth inventioncomprises a double data rate memory operating on a first clock, a firsttest pattern generation section, operating on a second clock having thesame frequency as that of the first clock, for generating first testdata, a second test pattern generation section, operating on a thirdclock, the inverted clock of the second clock, for generating secondtest data, and a test data selection section for selectively outputtingeither the first or second test data being output from the first testpattern generation section or the second test pattern generationsection, respectively, depending on either the signal value of thesecond clock or the signal value of the third clock, thereby inputtingthe selected test data to the double data rate memory as third testdata.

With this configuration, the first test pattern generation sectiongenerates the first test data depending on the second clock having thesame frequency as that of the first clock supplied to the double datarate memory. In addition, the second test pattern generation sectiongenerates the second test data depending on the third clock, theinverted clock of the second clock. Furthermore, the test data selectionsection selects either the first or second test data depending on eitherthe signal value of the second clock or the signal value of the thirdclock and inputs the selected test data to the double data rate memoryas the third test data. Hence, even when the operation speed of thefirst and second test pattern generation sections and the test dataselection section is restricted to the same operation speed as that ofthe double data rate memory, the double data rate memory can be testedat its actual operation speed. Since the test can be carried out evenwhen the operation speed of the first and second test pattern generationsections and the test data selection section is low, the drivecapability of the integrated circuit can be small, whereby the area ofthe circuit can be small and the power consumption of the circuit can bereduced.

A semiconductor integrated circuit in accordance with a seventhinvention comprises a double data rate memory operating on a firstclock, a first test pattern generation section, operating on a secondclock having the same frequency of that of the first clock, forgenerating first test data, a second test pattern generation section,operating on the second clock, for generating second test data, and atest data selection section for selectively outputting either the firstor second test data being output from the first test pattern generationsection or the second test pattern generation section, respectively,depending on the signal value of the second clock, thereby inputting theselected test data to the double data rate memory as third test data.

With this configuration, the first test pattern generation sectiongenerates the first test data depending on the second clock having thesame frequency as that of the first clock supplied to the double datarate memory. In addition, the second test pattern generation sectiongenerates the second test data depending on the second clock.Furthermore, the test data selection section selects either the first orsecond test data depending on the signal value of the second clock andinputs the selected test data to the double data rate memory as thethird test data. Hence, even when the operation speed of the first andsecond test pattern generation sections and the test data selectionsection is restricted to the same operation speed as that of the doubledata rate memory, the double data rate memory can be tested at itsactual operation speed. Since the test can be carried out even when theoperation speed of the first and second test pattern generation sectionsand the test data selection section is low, the drive capability of theintegrated circuit can be small, whereby the area of the circuit can besmall and the power consumption of the circuit can be reduced.

A semiconductor integrated circuit in accordance with an eighthinvention comprises a double data rate memory operating on a firstclock, a test pattern generation section, operating on a second clockhaving the same frequency as that of the first clock, for generatingfirst test data, an LSB0 processing section for generating second testdata by adding numeric value 0 to the first test data generated by thetest pattern generation section as the least significant bit thereof, anLSB1 processing section for generating third test data by adding numericvalue 1 to the first test data generated by the test pattern generationsection as the least significant bit thereof, and a test data selectionsection for selectively outputting either the second or third test databeing output from the LSB0 processing section or the LSB1 processingsection, respectively, depending on the signal value of the secondclock, thereby inputting the selected test data to the double data ratememory as fourth test data.

With this configuration, the test pattern generation section generatesthe first test data depending on the second clock having the samefrequency as that of the first clock supplied to the double data ratememory. In addition, the LSB0 processing section generates the secondtest data by adding numeric value 0 to the first test data as the leastsignificant bit thereof, and the LSB1 processing section generates thethird test data by adding numeric value 1 to the first test data as theleast significant bit thereof. Furthermore, the test data selectionsection selectively outputs either the second or third test datadepending on the signal value of the second clock. Therefore, even whenthe operation speed of the test pattern generation section, the LSB0processing section, the LSB1 processing section and the test dataselection section is restricted to the same operation speed as that ofthe double data rate memory, the double data rate memory can be testedat its actual operation speed. Since the test can be carried out evenwhen the operation speed of the test pattern generation section, theLSB0 processing section, the LSB1 processing section and the test dataselection section is low, the drive capability of the integrated circuitcan be small, whereby the area of the circuit can be small and the powerconsumption of the circuit can be reduced.

In the configuration of the eighth invention, a delay circuit forgenerating a delay clock obtained by delaying the second clock and forsupplying the delay clock to the test data selection section may beprovided.

With this configuration, since the delay clock is obtained by delayingthe second clock, a hold time can secured for the first clock, whereby atest pattern can be applied stably to the double data rate memoryoperating at high speed.

A semiconductor integrated circuit in accordance with a ninth inventioncomprises a double data rate memory operating on a first clock, a testpattern generation section, operating on a second clock having the samefrequency as that of the first clock, for generating first test data, anLSB0 processing section for generating second test data by addingnumeric value 0 to the first test data generated by the test patterngeneration section as the least significant bit thereof, an LSB1processing section for generating third test data by adding numericvalue 1 to the first test data generated by the test pattern generationsection as the least significant bit thereof, a clock selection sectioncapable of selecting either the second clock or the inverted clock ofthe second clock, and a test data selection section for selectivelyoutputting either the second or third test data being output from theLSB0 processing section or the LSB1 processing section, respectively,depending on the output of the clock selection section, therebyinputting the selected test data to the double data rate memory asfourth test data.

With this configuration, the clock selection section selects either thesecond clock or the inverted clock of the second clock, and the testdata selection section selects either the second or third test datadepending on the selected clock. By reversing the state of the selectionby the clock selection section, the timing for selecting the second andthird test data can be reversed. As a result, the quality of a testpattern can be raised. In addition, when an address signal is suppliedas a test pattern, the increment and decrement of the address signal canbe carried out selectively. The other effects are similar to those ofthe eighth invention.

A semiconductor integrated circuit in accordance with a 10th inventioncomprises a double data rate memory operating on a first clock, a memorydevice for capturing first output data being output from the double datarate memory in synchronization with the first clock, depending on asecond clock having the same frequency as that of the first clock, andan expected value comparison section, operating on the second clock, forrespectively comparing second output data being output from the memorydevice and third output data being output from the double data ratememory immediately after the output of the first output data with apredetermined expected value.

With this configuration, the memory device captures the first outputdata being output from the double data rate memory in synchronizationwith the first clock, depending on the inverted clock of the secondclock having the same frequency as that of the first clock supplied tothe double data rate memory. Then, the second output data being outputfrom the memory device and the third output data being output from thedouble data rate memory immediately after the output of the first outputdata are respectively compared with the predetermined expected valuedepending on the second clock in the expected value comparison section.Therefore, even when the operation speed of the memory device and theexpected value comparison section is restricted to the same operationspeed as that of the double data rate memory, the double data ratememory can be tested at its actual operation speed. Since the test canbe carried out even when the operation speed of the memory device andthe expected value comparison section is low, the drive capability ofthe integrated circuit can be small, whereby the area of the circuit canbe small and the power consumption of the circuit can be reduced.

A memory test method in accordance with an 11th invention is a method oftesting a memory operating on a first clock, comprising the steps ofgenerating first test data depending on a second clock having half thefrequency of the first clock, generating second test data depending on athird clock, the inverted clock of the second clock, selecting eitherthe first or second test data depending on either the signal value ofthe second clock or the signal value of the third clock, and inputtingthe selected test data to the memory as third test data.

With this method, the memory operating on the first clock can be testeddepending on the second clock having half the frequency of the firstclock. Since the frequency of the second clock can be low at this time,the drive capability of the circuit for the test can be small, wherebythe area of the circuit can be small and the power consumption of thecircuit can be reduced.

A memory test method in accordance with a 12th invention is a method oftesting a memory operating on a first clock, comprising the steps ofgenerating first test data depending on a second clock having half thefrequency of the first clock, generating second test data by addingnumeric value 0 to the first test data as the least significant bitthereof, generating third test data by adding numeric value 1 to thefirst test data as the least significant bit thereof, selecting eitherthe second or third test data depending on the signal value of thesecond clock, and inputting the selected test data to the memory.

With this method, effects similar to those of the 11th invention areobtained.

A memory test method in accordance with a 13th invention is a method oftesting a memory operating on a first clock, comprising the steps ofholding first data being output from the memory in synchronization withthe first clock as second data depending on a second clock having halfthe frequency of the first clock, and respectively comparing the seconddata and third data being output in synchronization with the first clockfrom the memory immediately after the output of the first data with apredetermined expected value depending on the second clock.

With this method, effects similar to those of the 11th invention areobtained.

A memory test method in accordance with a 14th invention is a method oftesting a double data rate memory operating on a first clock, comprisingthe steps of generating first test data depending on a second clockhaving the same frequency as that of the first clock, generating secondtest data depending on a third clock, the inverted clock of the secondclock, selecting either the first or second test data depending oneither the signal value of the second clock or the signal value of thethird clock, and inputting the selected test data to the double datarate memory as third test data.

With this method, the double data rate memory operating on the firstclock can be tested depending on the second clock having the samefrequency as that of the first clock. Since the frequency of the secondclock is not required to be increased to double the frequency of thefirst clock but can be low at this time, the drive capability of thecircuit for the test can be small, whereby the area of the circuit canbe small and the power consumption of the circuit can be reduced.

A memory test method in accordance with a 15th invention is a method oftesting a double data rate memory operating on a first clock, comprisingthe steps of generating first test data depending on a second clockhaving the same frequency as that of the first clock, generating secondtest data by adding numeric value 0 to the first test data as the leastsignificant bit thereof, generating third test data by adding numericvalue 1 to the first test data as the least significant bit thereof,selecting either the second or third test data depending on the signalvalue of the second clock, and inputting the selected test data to thedouble data rate memory.

With this method, effects similar to those of the 14th invention areobtained.

A memory test method in accordance with a 16th invention is a method oftesting a double data rate memory operating on a first clock, comprisingthe steps of holding first data being output from the double data ratememory in synchronization with the first clock as second data dependingon a second clock having the same frequency as that of the first clock,and respectively comparing the second data and third data being outputin synchronization with the first clock from the double data rate memoryimmediately after the output of the first data with a predeterminedexpected value depending on the second clock.

With this method, effects similar to those of the 14th invention areobtained.

In the configurations of the above-mentioned first, second, sixth andseventh invention, a delay circuit for generating a delay clock obtainedby delaying the second clock and for supplying the delay clock to thetest data selection section may be provided.

With this configuration, since the delay clock is obtained by delayingthe second clock, a hold time can secured for the first clock, whereby atest pattern can be applied stably to the memory operating at highspeed.

A semiconductor integrated circuit in accordance with a 17th inventioncomprises a memory operating on a first clock, a first test patterngeneration section, operating on a second clock having half thefrequency of the first clock, for generating first test data, a secondtest pattern generation section, operating on a third clock, theinverted clock of the second clock, for generating second test data, aclock selection section capable of selecting either the second clock orthe inverted clock of the second clock, and a test data selectionsection for selectively outputting either the first or second test databeing output from the first test pattern generation section or thesecond test pattern generation section, respectively, depending on theoutput of the clock selection section, thereby inputting the selectedtest data to the memory as third test data.

A semiconductor integrated circuit in accordance with an 18th inventioncomprises a memory operating on a first clock, a first test patterngeneration section, operating on a second clock having half thefrequency of the first clock, for generating first test data, a secondtest pattern generation section, operating on the second clock, forgenerating second test data, a clock selection section capable ofselecting either the second clock or the inverted clock of the secondclock, and a test data selection section for selectively outputtingeither the first or second test data being output from the first testpattern generation section or the second test pattern generationsection, respectively, depending on the output of the clock selectionsection, thereby inputting the selected test data to the memory as thirdtest data.

A semiconductor integrated circuit in accordance with a 19th inventioncomprises a double data rate memory operating on a first clock, a firsttest pattern generation section, operating on a second clock having thesame frequency as that of the first clock, for generating first testdata, a second test pattern generation section, operating on a thirdclock, the inverted clock of the second clock, for generating secondtest data, a clock selection section capable of selecting either thesecond clock or the inverted clock of the second clock, and a test dataselection section for selectively outputting either the first or secondtest data being output from the first test pattern generation section orthe second test pattern generation section, respectively, depending onthe output of the clock selection section, thereby inputting theselected test data to the double data rate memory as third test data.

A semiconductor integrated circuit in accordance with a 20th inventioncomprises a double data rate memory operating on a first clock, a firsttest pattern generation section, operating on a second clock having thesame frequency as that of the first clock, for generating first testdata, a second test pattern generation section, operating on the secondclock, for generating second test data, a clock selection sectioncapable of selecting either the second clock or the inverted clock ofthe second clock, and a test data selection section for selectivelyoutputting either the first or second test data being output from thefirst test pattern generation section or the second test patterngeneration section, respectively, depending on the output of the clockselection section, thereby inputting the selected test data to thedouble data rate memory as third test data.

With these configurations, the clock selection section selects eitherthe second clock or the inverted clock of the second clock, and the testdata selection section selects either the first or second test datadepending on the selected clock. By reversing the state of the selectionby the clock selection section, the timing for selecting the first andsecond test data can be reversed. As a result, the quality of a testpattern can be raised. In addition, when an address signal is suppliedas a test pattern, the increment and decrement of the address signal canbe carried out selectively. The other effects are similar to those ofthe first, second sixth or seventh invention.

In the above descriptions, the memory is an ordinary data rate memoryoperating in synchronization with either the rising edge or falling edgeof a clock, and the double data rate memory is a memory operating insynchronization with both the rising and falling edges of a clock.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a first embodiment of the presentinvention;

FIG. 2 is a timing chart illustrating the operation of the semiconductorintegrated circuit in accordance with the first embodiment of thepresent invention;

FIG. 3 is a timing chart illustrating the operation of the semiconductorintegrated circuit in accordance with the first embodiment of thepresent invention;

FIG. 4 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a second embodiment of the presentinvention;

FIG. 5 is a timing chart illustrating the operation of the semiconductorintegrated circuit in accordance with the second embodiment of thepresent invention;

FIG. 6 is a timing chart illustrating the operation of the semiconductorintegrated circuit in accordance with the second embodiment of thepresent invention;

FIG. 7 is a flowchart showing a method of testing a memory in accordancewith the first, second, third and fourth embodiments of the presentinvention;

FIG. 8 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a third embodiment of the presentinvention;

FIG. 9 is a timing chart illustrating the operation of the semiconductorintegrated circuit in accordance with the third embodiment of thepresent invention;

FIG. 10 is a timing chart illustrating the operation of thesemiconductor integrated circuit in accordance with the third embodimentof the present invention;

FIG. 11 is a block diagram showing a first specific example of a delaycircuit for the semiconductor integrated circuit in accordance with thethird embodiment of the present invention;

FIG. 12 is a block diagram showing a second specific example of a delaycircuit for the semiconductor integrated circuit in accordance with thethird embodiment of the present invention;

FIG. 13 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a fourth embodiment of the presentinvention;

FIG. 14 is a timing chart illustrating the operation of thesemiconductor integrated circuit in accordance with the fourthembodiment of the present invention;

FIG. 15 is a timing chart illustrating the operation of thesemiconductor integrated circuit in accordance with the fourthembodiment of the present invention;

FIG. 16 is a block diagram showing another configuration of the clockselection section of the semiconductor integrated circuit in accordancewith the fourth embodiment of the present invention;

FIG. 17 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a fifth embodiment of the presentinvention;

FIG. 18 is a timing chart illustrating the operation of thesemiconductor integrated circuit in accordance with the fifth embodimentof the present invention;

FIG. 19 is a timing chart illustrating the operation of thesemiconductor integrated circuit in accordance with the fifth embodimentof the present invention;

FIG. 20 is a flowchart showing a method of testing a memory inaccordance with the fifth embodiment of the present invention;

FIG. 21 is a block diagram showing the prior art; and

FIG. 22 is a timing chart illustrating the operation of the prior art.

FIG. 23 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a sixth embodiment of the presentinvention;

FIG. 24 is a block diagram showing a first specific example of a delaycircuit for the semiconductor integrated circuit in accordance with thesixth embodiment of the present invention;

FIG. 25 is a block diagram showing a second specific example of a delaycircuit for the semiconductor integrated circuit in accordance with thesixth embodiment of the present invention;

FIG. 26 is a block diagram showing the configuration of a semiconductorintegrated circuit in accordance with a seventh embodiment of thepresent invention; and

FIG. 27 is a block diagram showing another configuration of the clockselection section of the semiconductor integrated circuit in accordancewith the seventh embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments in accordance with the present invention will be describedbelow referring to the drawings. The same or similar components aredesignated by the same numerals, and their explanations are notrepeated.

First Embodiment

FIG. 1 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a first embodimentof the present invention, and FIG. 2 is a timing chart at varioussections of FIG. 1.

In FIG. 1, numeral 101 designates a first test pattern generationsection operating in synchronization with the rising edge of an inputclock. Numeral 102 designates a second test pattern generation sectionoperating in synchronization with the rising edge of an input clock.Numeral 103 designates an inverter for generating an inverted clock.Numeral 104 designates a test data selection section. These constitute aBIST circuit. Numeral 105 designates an ordinary data rate memory to besubjected to a BIST, and the memory operates in synchronization with therising edge of an input clock.

A first clock CK1 is a clock signal supplied to the memory 105. A secondclock CK2 is a clock signal supplied to the first test patterngeneration section 101, and its frequency is half the frequency of thefirst clock CK1. A third clock CK3 is a clock signal obtained byinverting the second clock CK2 using the inverter 103 and serves as theclock signal for the second test pattern generation section 102.

The first test pattern generation section 101 generates an addresssignal TP1, “000” at time t0, “010” at time t2, “100” at time t4, and“110” at time t6, as test data in synchronization with the rising edgeof the second clock CK2 as shown in the timing chart of FIG. 2.

Furthermore, the second test pattern generation section 102 generates anaddress signal TP2, “001” at time t1, “011” at time t3, “101” at timet5, and “111” at time t7, as test data in synchronization with therising edge of the third clock CK3 as shown in the timing chart of FIG.2.

The test data selection section 104 alternately selects the addresssignals TP1 and TP2 generated by the first test pattern generationsection 101 and the second test pattern generation section 102,respectively, depending on the logical value 0 or 1 of the second clockCK2, and outputs test data, that is, an address signal TP3. The testdata selection section 104 may carry out the selection operationdepending on the logical value 0 or 1 of the third clock CK3.

Assuming that the address signal TP1 is selected when the second clockCK2 is logical value 1 and that the address signal TP2 is selected whenthe second clock CK2 is logical value 0, the address signal TP3 beinginput to the memory 105 as test data is “000” at time t0, “001” at timet1, “010” at time t2, “011” at time t3, “100” at time t4, “101” at timet5, “110” at time t6 and “111” at time t7. As a result, a test pattern(a series of address signals) can be generated in synchronization withthe rising edge of the first clock CK1 of the memory 105.

As described above, this embodiment comprises the first test patterngeneration section 101 operating on the second clock CK2, the secondtest pattern generation section 102 operating on the third clock CK3obtained by inverting the second clock CK2, and the test data selectionsection 104 for selecting either of the outputs of the first and secondtest pattern generation sections 101 and 102 depending on either of thestates of the second and third clocks CK2 and CK3 and for inputting theselected output to the memory 105. With this configuration, a testpattern can be applied at the actual operation speed of the memory 105to the memory 105 operating at double the frequency of the first andsecond test pattern generation sections 101 and 102. In other words, thememory 105 operating at the high frequency can be tested withoutdoubling the operation frequency of the first and second test patterngeneration sections 101 and 102 constituting the BIST circuit. Hence,the drive capability of the first and second test pattern generationsections 101 and 102 in carrying out a BIST can be small, whereby thearea of the circuit can be small and the power consumption of thecircuit can be reduced.

In the case when the memory 105 is a DDR memory, as shown in the timingchart of FIG. 3, by inputting clock signals, having the same frequency,as the first clock CK1 supplied to the DDR memory and the second clockCK2 supplied to the BIST circuit, a test pattern can be input to the DDRmemory in synchronization with both the rising and falling edges of theclock CK1, whereby effects similar to those of this embodiment can beobtained. In other words, the DDR memory can be tested without doublingthe operation frequency of the first and second test pattern generationsections constituting the BIST circuit. Hence, the drive capability ofthe first and second test pattern generation sections 101 and 102 incarrying out a BIST can be small, whereby the area of the circuit can besmall and the power consumption of the circuit can be reduced.

Furthermore, in the configuration shown in FIG. 1, the third clock CK3obtained by inverting the second clock CK2 using the inverter 103 issupplied to the second test pattern generation section 102. However,even if the second clock CK2 is supplied directly, the address signalTP3 can be obtained, just as in the case when the third clock CK3 issupplied. In this case, however, the address signal TP2 advances by halfthe cycle of the second clock CK2 in comparison with the timing shown inFIG. 2.

Second Embodiment

FIG. 4 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a second embodimentof the present invention, and FIG. 5 is a timing chart.

The memory test method using the semiconductor integrated circuit shownin FIG. 4 will be described below on the basis of a flowchart shown inFIG. 7.

In FIG. 4, numeral 201 designates a test pattern generation sectionoperating in synchronization with the rising edge of an input clock.Numeral 202 designates an LSB0 processing section, numeral 203designates an LSB1 processing section, and numeral 204 designates a testdata selection section. These constitute a BIST circuit. Numeral 205designates an ordinary data rate memory to be subjected to a BIST, andthe memory operates in synchronization with the rising edge of an inputclock.

A first clock CK1 is a clock signal supplied to the memory 205. A secondclock CK2 is a clock signal supplied to the test pattern generationsection 201, and its frequency is half the frequency of the first clockCK1.

In FIG. 7, first, a test pattern generation processing step ST301 iscarried out. Test data is generated by the test pattern generationsection 201 in synchronization with the rising edge of the second clockCK2. More specifically, {00} is generated as test data, that is, anaddress signal TP0, at time t0, {01} is generated as the address signalTP0 at time t2, {10} is generated as the address signal TP0 at time t4,and {11} is generated as the address signal TP0, at time t6.

Next, an LSB processing step ST302 is carried out. In other words,numeric value 0 or 1 is added to the address signal TP0 generated by thetest pattern generation section 201 as the least significant bitthereof, thereby generating address signals TP1 and TP2.

More specifically, in the LSB0 processing section 202, numeric value 0is added to the address signal TP0 as the least significant bit thereof,thereby generating the address signal TP1. Furthermore, in the LSB1processing section 203, numeric value 1 is added to the address signalTP0 as the least significant bit thereof, thereby generating the addresssignal TP2. In the LSB0 processing section 202 and the LSB1 processingsection 203, synchronization depending on a clock is not carried out.Instead, only the logical value “0” or “1” is simply added to the outputof the test pattern generation section 201 as the LSB thereof. This isrepresented by verilog as follows:assign TP1={TP0,0};assign TP2={TP0,1};

As shown in the timing chart of FIG. 5, at time t0, numeric value 0 isadded as the least significant bit to the two-bit address {00} generatedas the address signal TP0 in the LSB0 processing section 202, whereby athree-bit address {000} is generated as the address signal TP1. Inaddition, numeric value 1 is added as the least significant bit to theaddress signal TP0 in the LSB1 processing section 203, whereby athree-bit address {001} is generated as the address signal TP2.

At time t2, numeric value 0 is added as the least significant bit to thetwo-bit address {01} generated as the address signal TP0 in the LSB0processing section 202, whereby a three-bit address {010} is generatedas the address signal TP1. In addition, numeric value 1 is added as theleast significant bit to the address signal TP0 in the LSB1 processingsection 203, whereby a three-bit address {011} is generated as theaddress signal TP2.

At time t4, numeric value 0 is added as the least significant bit to thetwo-bit address {10} generated as the address signal TP0 in the LSB0processing section 202, whereby a three-bit address {100} is generatedas the address signal TP1. In addition, numeric value 1 is added as theleast significant bit to the address signal TP0 in the LSB1 processingsection 203, whereby a three-bit address {101} is generated as theaddress signal TP2.

At time t6, numeric value 0 is added as the least significant bit to thetwo-bit address {11} generated as the address signal TP0 in the LSB0processing section 202, whereby a three-bit address {110} is generatedas the address signal TP1. In addition, numeric value 1 is added as theleast significant bit to the address signal TP0 in the LSB1 processingsection 203, whereby a three-bit address {111} is generated as theaddress signal TP2.

Next, test data selection processing step ST303 is carried out. At thisstep, the address signal TP1, that is, the test data generated by theLSB0 processing section 202 and the address signal TP2, that is, thetest data generated by the LSB1 processing section 203, are selectivelyoutput as an address signal TP3 depending on the signal value of thesecond clock CK2.

The test data selection section 204 selects the address signal TP1 andoutputs it to the memory 205 when the second clock CK2 has logical value1, and selects the address signal TP2 and outputs it to the memory 205when the second clock CK2 has logical value 0.

In the period from time t0 to time t1 in which the logical value of thesecond clock CK2 is 1, the test data selection section 204 outputs testdata {000} as the address signal TP3. In the period from time t1 to timet2 in which the logical value of the second clock CK2 is 0, the testdata selection section 204 outputs {001} as the address signal TP3.

In the period from time t2 to time t3 in which the logical value of thesecond clock CK2 is 1, the test data selection section 204 outputs {010}as the address signal TP3. In the period from time t3 to time t4 inwhich the logical value of the second clock CK2 is 0, the test dataselection section 204 outputs {011} as the address signal TP3.

In the period from time t4 to time t5 in which the logical value of thesecond clock CK2 is 1, the test data selection section 204 outputs {100}as the address signal TP3. In the period from time t5 to time t6 inwhich the logical value of the second clock CK2 is 0, the test dataselection section 204 outputs {101} as the address signal TP3.

In the period from time t6 to time t7 in which the logical value of thesecond clock CK2 is 1, the test data selection section 204 outputs {110}as the address signal TP3. In the period from time t7 to time t8 inwhich the logical value of the second clock CK2 is 0, the test dataselection section 204 outputs {111} as the address signal TP3.

Next, test pattern application processing step ST304 is carried out. Inthis step, the address signal TP3 output from the test data selectionsection 204 is applied to the memory 205.

As described above, this embodiment comprises the single test patterngeneration section 201 operating on the second clock CK2, the LSB0processing section 202 for adding numeric value 0 as the leastsignificant bit to the address signal TP0 output from the test patterngeneration section 201, the LSB1 processing section 203 for addingnumeric value 1 as the least significant bit to the address signal TP0,and the test data selection section 204 for selecting and outputtingeither the address signal TP1 of the LSB0 processing section 202 or theaddress signal TP2 of the LSB1 processing section 203. With thisconfiguration, a test pattern can be applied at the actual operationspeed of the memory 205 to the memory 205 operating at double thefrequency of the test pattern generation section 201. In other words,the memory 205 operating at the high frequency can be tested withoutdoubling the operation frequency of the test pattern generation section201, the LSB0 processing section 202 and the LSB1 processing section 203constituting the BIST circuit. Hence, the drive capability of the testpattern generation section 201, the LSB0 processing section 202 and theLSB1 processing section 203 in carrying out a BIST can be small, wherebythe area of the circuit can be small and the power consumption of thecircuit can be reduced.

In the case when the memory 205 is a DDR memory, as shown in the timingchart of FIG. 6, by inputting clock signals, having the same frequency,as the first clock CK1 supplied to the DDR memory and the second clockCK2 supplied to the BIST circuit, a test pattern can be input to the DDRmemory in synchronization with both the rising and falling edges of theclock CK1, whereby effects similar to those of this embodiment can beobtained. In other words, the DDR memory can be tested without doublingthe operation frequency of the test pattern generation section 201constituting the BIST circuit. Hence, the drive capability of the testpattern generation section 201, the LSB0 processing section 202 and theLSB1 processing section 203 in carrying out a BIST can be small, wherebythe area of the circuit can be small and the power consumption of thecircuit can be reduced.

Third Embodiment

FIG. 8 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a third embodimentof the present invention, and FIG. 9 is a timing chart.

The memory test method in the semiconductor integrated circuit shown inFIG. 8 will be described below on the basis of the flowchart of FIG. 7.

The semiconductor integrated circuit differs from the semiconductorintegrated circuit shown in FIG. 4 in that the circuit is equipped witha delay circuit 206 for generating a delay clock CK2′ obtained bydelaying the second clock CK2. This delay circuit 206 is formed of, forexample, a circuit for generating a constant delay time by arrangingbuffers or inverters in series or a delay device capable of generatingthe constant delay time.

The test data selection processing step ST303 and the test patternapplication processing step ST304 in this embodiment will be describedbelow.

At the test data selection processing step ST303, either the addresssignal TP1 generated by the LSB0 processing section 202 or the addresssignal TP2 generated by the LSB1 processing section 203 is selectivelyoutput depending on a delay clock CK2′ obtained by delaying the secondclock CK2 using the delay circuit 206. The selection processing iscarried out by the test data selection section 204.

The test data selection section 204 selects the address signal TP1 whenthe delay clock CK2′ has logical value 1, and selects the address signalTP2 when the delay clock CK2′ has logical value 0.

In the period from time t0′ to time t1′ in which the logical value ofthe delay clock CK2′ is 1, the test data selection section 204 outputs{000} as the address signal TP3, and in the period from time t1′ to timet2′ in which the logical value of the delay clock CK2′ is 0, the testdata selection section 204 outputs {001} as the address signal TP3.

In the period from time t2′ to time t3′ in which the logical value ofthe delay clock CK2′ is 1, the test data selection section 204 outputs{010} as the address signal TP3, and in the period from time t3′ to timet4′ in which the logical value of the delay clock CK2′ is 0, the testdata selection section 204 outputs {011} as the address signal TP3.

In the period from time t4′ to time t5′ in which the logical value ofthe delay clock CK2′ is 1, the test data selection section 204 outputs{100} as the address signal TP3, and in the period from time t5′ to timet6′ in which the logical value of the delay clock CK2′ is 0, the testdata selection section 204 outputs {101} as the address signal TP3.

In the period from time t6′ to time t7′ in which the logical value ofthe delay clock CK2′ is 1, the test data selection section 204 outputs{110} as the address signal TP3, and in the period from time t7′ to timet8′ in which the logical value of the delay clock CK2′ is 0, the testdata selection section 204 outputs {111} as the address signal TP3.

In the test pattern application processing step ST304, the addresssignal TP3 output from the test data selection section 204 is applied tothe memory 205 operating in synchronization with the rising edge of thefirst clock CK1.

As described above, in this embodiment, either the address signal TP1generated by the LSB0 processing section 202 or the address signal TP2generated by the LSB1 processing section 203 is selectively outputdepending on the delay clock CK2′ obtained by delaying the second clockCK2 using the delay circuit 206. Hence, the test data to be input to thememory 205, that is, the address signal TP3, is input so as to bedelayed by a constant delay value from the clock CK1 of the memory 205,whereby a hold time can be secured for the clock CK1 and a test patterncan be applied stably to the memory 205 operating at high speed.

The hold time and a setup time will be described herein. The memory 205operates in synchronization with the rising edge of the clock CK1. Atthis time, if the values of the address and the data input signalsupplied to the memory 205 have not yet been determined a constant timebefore the rising edge of the clock CK1, the address and the data arenot input to the memory 205. This constant time is referred to as thesetup time. In addition, it is necessary to hold the address and thedata for a constant time after the clock CK1 has risen. This time isreferred to as the hold time.

In addition, by the single test pattern generation section 201 operatingon the clock CK2, a test pattern can be applied at the actual operationspeed of the memory 205 to the memory 205 operating at double thefrequency of the test pattern generation section 201, just as in thecase of the second embodiment.

In the case when the memory operates on the clock CK1 having double thefrequency of the clock CK2, effects similar to those of this embodimentcan be obtained by using a flip-flop operating at the falling edge ofthe clock CK1 as shown in FIG. 11 or by using a latch wherein datapasses through in the high-level period of the clock CK1 as shown inFIG. 12.

In the case when the memory 205 is a DDR memory, as shown in the timingchart of FIG. 10, by inputting clock signals, having the same frequency,as the clock CK1 supplied to the DDR memory and the clock CK2 suppliedto the BIST circuit, a test pattern can be input to the DDR memory insynchronization with both the rising and falling edges of the clocksignal CK1, whereby effects similar to those of this embodiment can beobtained.

Fourth Embodiment

FIG. 13 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a fourth embodimentof the present invention, and FIG. 14 is a timing chart.

The memory test method in the semiconductor integrated circuit shown inFIG. 13 will be described below on the basis of the flowchart of FIG. 7.

The semiconductor integrated circuit differs from the semiconductorintegrated circuit shown in FIG. 4 in that the circuit is equipped witha clock selection section 207.

The clock selection section 207 is a circuit that selects the secondclock CK2 or the inverted signal of the second clock CK2 and outputs theselected clock signal as a clock CK4. The test data selection section204 selects either the address signal TP1 generated by the LSB0processing section 202 or the address signal TP2 generated by the LSB1processing section 203 depending on the signal value of the clock CK4output from the clock selection section 207.

The case wherein the inverted signal of the clock CK2 is selected by theclock selection section 207 will be described below.

The first clock CK1 is a clock signal for the memory 205 operating insynchronization with the rising edge of the clock being input thereto.The second clock CK2 is a clock signal for the test pattern generationsection 201 operating in synchronization with the rising edge of theclock being input thereto, and its frequency is half the frequency ofthe first clock CK1.

At the test pattern generation processing step ST301, an address signalTP0 is generated by the test pattern generation section 201 insynchronization with the rising edge of the clock CK2. Morespecifically, {11} is generated as the address signal TP0 at time t0,{10} is generated as the address signal TP0 at time t2, {01} isgenerated as the address signal TP0 at time t4, and {00} is generated asthe address signal TP0 at time t6.

At the LSB processing step ST302, numeric value 0 or 1 is added to theaddress signal TP0 generated by the test pattern generation section 201as the least significant bit thereof. In the LSB0 processing section202, numeric value 0 is added to the address signal TP0 as the leastsignificant bit thereof, thereby generating the address signal TP1.Furthermore, in the LSB1 processing section 203, numeric value 1 isadded to the address signal TP0 as the least significant bit thereof,thereby generating the address signal TP2.

As shown in the timing chart of FIG. 14, at time t0, numeric value 0 isadded as the least significant bit to the two-bit address {11} generatedas the address signal TP0 in the LSB0 processing section 202, whereby athree-bit address {110} is generated as the address signal TP1. Inaddition, numeric value 1 is added as the least significant bit to theaddress signal TP0 in the LSB1 processing section 203, whereby athree-bit address {111} is generated as the address signal TP2.

At time t2, numeric value 0 is added as the least significant bit to thetwo-bit address {10} generated as the address signal TP0 in the LSB0processing section 202, whereby a three-bit address {100} is generatedas the address signal TP1. In addition, numeric value 1 is added as theleast significant bit to the address signal TP0 in the LSB1 processingsection 203, whereby a three-bit address {101} is generated as theaddress signal TP2.

At time t4, numeric value 0 is added as the least significant bit to thetwo-bit address {01} generated as the address signal TP0 in the LSB0processing section 202, whereby a three-bit address {010} is generatedas the address signal TP1. In addition, numeric value 1 is added as theleast significant bit to the address signal TP0 in the LSB1 processingsection 203, whereby a three-bit address {011} is generated as theaddress signal TP2.

At time t6, numeric value 0 is added as the least significant bit to thetwo-bit address {00} generated as the address signal TP0 in the LSB0processing section 202, whereby a three-bit address {000} is generatedas the address signal TP1. In addition, numeric value 1 is added as theleast significant bit to the address signal TP0 in the LSB1 processingsection 203, whereby a three-bit address {001} is generated as theaddress signal TP2.

The clock selection section 207 selects the clock CK2 or the invertedsignal of the clock CK2 and outputs the selected clock signal as theclock CK4. The test data selection section 204 selects either theaddress signal TP1 generated by the LSB0 processing section 202 or theaddress signal TP2 generated by the LSB1 processing section 203depending on the signal value of the clock CK4 output from the clockselection section 207.

In other words, at the test data selection processing step ST303, eitherthe address signal TP1 generated by the LSB0 processing section 202 orthe address signal TP2 generated by the LSB1 processing section 203 isselectively output depending on the signal value of the clock CK4 of theclock selection section 207.

The test data selection section 204 selects the address signal TP1 whenthe clock CK4 has logical value 1, and selects the address signal TP2when the clock CK4 has logical value 0.

In the case when the inverted signal of the clock CK2 is selected as theoutput clock CK4 of the clock selection section 207 and in the periodfrom time t0 to time t1 in which the logical value of the clock CK2 is1, that is, the logical value of the clock CK4 is 0, the test dataselection section 204 outputs {111} as the address signal TP3. Inaddition, in the period from time t1 to time t2 in which the logicalvalue of the clock CK2 is 0, that is, the logical value of the clock CK4is 1, the test data selection section 204 outputs {110} as the addresssignal TP3.

In the period from time t2 to time t3 in which the logical value of theclock CK2 is 1, that is, the logical value of the clock CK4 is 0, thetest data selection section 204 generates {101} as the address signalTP3. In addition, in the period from time t3 to time t4 in which thelogical value of the clock CK2 is 0, that is, the logical value of theclock CK4 is 1, the test data selection section 204 generates {100} asthe address signal TP3.

In the period from time t4 to time t5 in which the logical value of theclock CK2 is 1, that is, the logical value of the clock CK4 is 0, thetest data selection section 204 generates {011} as the address signalTP3. In addition, in the period from time t5 to time t6 in which thelogical value of the clock CK2 is 0, that is, the logical value of theclock CK4 is 1, the test data selection section 204 generates {010} asthe address signal TP3.

In the period from time t6 to time t7 in which the logical value of thesecond clock CK2 is 1, that is, the logical value of the clock CK4 is 0,the test data selection section 204 outputs {001} as the address signalTP3. In addition, in the period from time t7 to time t8 in which thelogical value of the clock CK2 is 0, that is, the logical value of theclock CK4 is 1, the test data selection section 204 outputs {000} as theaddress signal TP3.

At the test pattern application processing step ST304, the addresssignal TP3 output from the test data selection section 204 is applied tothe memory 205.

As described above, in this embodiment, by the single test patterngeneration section 201 operating on the clock CK2, a test pattern can beapplied at the actual operation speed of the memory 205 to the memory205 operating at double the frequency of the test pattern generationsection 201. The other effects are similar to those of the secondembodiment.

Furthermore, in this embodiment, a circuit wherein the clock CK2 or thesignal obtained by inverting the clock CK2 using an inverter 207 a isselected by a selector 207 b is used as the clock selection section 207.However, even when a circuit capable of selectively outputting eitherthe clock CK2 or the inverted signal of the clock CK2, formed of anexclusive OR circuit 208 a as shown in FIG. 16, is used as a clockselection section 208 instead of the clock selection section 207,effects similar to those of this embodiment can be obtained.

By providing the clock selection section 207 or 208, the test dataselection section 204 can switch between the signal selected when thelogical value of the clock CK2 is 0 and the signal selected when thelogical value of the clock CK2 is 1. Hence, it is possible to obtain notonly a configuration wherein an even-numbered address is applied to thememory 205 when the logical value of the clock CK2 is 1 and anodd-numbered address is applied to the memory 205 when the logical valueof the clock CK2 is 0, but also a configuration wherein an odd-numberedaddress is applied to the memory 205 when the logical value of the clockCK2 is 1 and an even-numbered address is applied to the memory 205 whenthe logical value of the clock CK2 is 0. Therefore, the quality of thetest pattern is raised, and address increment and decrement can becarried out.

The quality of the test pattern is explained below. In actual operation,when the clock CK2 is high (this corresponds to the high state of theclock CK1 in the case of a double data rate memory), both even-numberedand odd-numbered addresses should be able to be accessed. However, ifonly the even-numbered addresses can be accessed when the clock CK2 ishigh during a test, it is impossible to say that this test is ahigh-quality test. Since the odd-numbered addresses cannot be accessedwhen the clock CK2 is high, it is said that the quality of the testpattern is low. However, since the test can be carried out by using boththe even-numbered and odd-numbered addresses in the case of thisembodiment, it is said that the quality of the test pattern is raised.

In the case when the memory 205 is a DDR memory, as shown in the timingchart of FIG. 15, by inputting clock signals, having the same frequency,as the clock CK1 supplied to the DDR memory and the clock CK2 suppliedto the BIST circuit, a test pattern can be input in synchronization withboth the rising and falling edges of the clock CK1 of the DDR memory,whereby effects similar to those of this embodiment can be obtained.

Fifth Embodiment

FIG. 17 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a fifth embodimentof the present invention, and FIG. 18 is a timing chart.

The memory test method in the semiconductor integrated circuit shown inFIG. 17 will be described below on the basis of the flowchart of FIG.20.

In FIG. 17, numeral 205 designates a memory operating in synchronizationwith the rising edge of an input clock. Numeral 601 designates anexpected value comparison section operating in synchronization with therising edge of an input clock. Numeral 602 designates a memory deviceoperating in synchronization with the falling edge of the input clockfor the expected value comparison section 601. This memory device 602 isformed of a flip-flop 602 a, for example.

The first clock CK1 is the clock signal for the memory 205. The secondclock CK2 is the clock signal for the expected value comparison section601 and the memory device 602, and its frequency is half the frequencyof the clock CK1.

At memory data output processing step ST701, a data signal 610 is outputfrom the data output port DOUT of the memory 205 in synchronization withthe rising edge of the clock CK1 at times t0, t1, t2, t3, t4, t5, t6, t7and t8.

The data 610 output from the memory 205 in synchronization with therising edge of the clock CK1 at time t0 is captured by the flip-flop 602a in synchronization with the falling edge of the clock CK2 at time t1at data temporary capture processing step ST702. Then, at expected valuecomparison processing step ST703, the data enters the expected valuecomparison section 601 as a data signal 611 and is compared with anexpected value at time t2.

In addition, the data output from the memory 205 in synchronization withthe rising edge of the clock CK1 at time t1 enters the expected valuecomparison section 601 as the data signal 610 and is compared with theexpected value at time t2.

Similarly, the data output from the memory 205 in synchronization withthe rising edge of the clock CK1 at time t2 is captured by the flip-flop602 a in synchronization with the falling edge of the clock CK2 at timet3 at the data temporary capture processing step ST702. Then, the dataenters the expected value comparison section 601 as the data signal 611and is compared with the expected value at time t4.

In addition, the data output from the memory 205 in synchronization withthe rising edge of the clock CK1 at time t3 enters the expected valuecomparison section 601 as the data signal 610 and is compared with theexpected value at time t4 at the expected value comparison processingstep ST703.

The data output from the memory 205 in synchronization with the risingedge of the clock CK1 at time t4 is captured by the flip-flop 602 a insynchronization with the falling edge of the clock CK2 at time t5 at thedata temporary capture processing step ST702. Then, the data enters theexpected value comparison section 601 as the data signal 611 and iscompared with the expected value at time t6.

In addition, the data output from the memory 205 in synchronization withthe rising edge of the clock CK1 at time t5 enters the expected valuecomparison section 601 as the data signal 610 and is compared with theexpected value at time t6 at the expected value comparison processingstep ST703.

The data output from the memory 205 in synchronization with the risingedge of the clock CK1 at time t6 is captured by the flip-flop 602 a insynchronization with the falling edge of the clock CK2 at time t7 at thedata temporary capture processing step ST702. Then, the data enters theexpected value comparison section 601 as the data signal 611 and iscompared with the expected value at time t8.

In addition, the data output from the memory 205 in synchronization withthe rising edge of the clock CK1 at time t7 enters the expected valuecomparison section 601 as the data signal 610 and is compared with theexpected value at time t8 at the expected value comparison processingstep ST703.

As described above, in this embodiment, the comparison with the expectedvalue at the expected value comparison processing step ST703 is carriedout only at the rising edge of the clock CK2. A test pattern can thus beapplied at the actual operation speed of the memory 205 to the memory205 operating at double the operation frequency of the expected valuecomparison section 601, without changing the operation speed of theexpected value comparison section 601.

In this embodiment, the flip-flop operating at the falling edge of theclock CK2 is used as the memory device 602. However, even if a latchwherein data passes through in the high-level period of the clock CK2 isused, effects similar to those of this embodiment can be obtained.

In the case when the memory 205 is a DDR memory, as shown in the timingchart of FIG. 19, by inputting clock signals, having the same frequency,as the clock CK1 supplied to the DDR memory and the clock CK2 suppliedto the BIST circuit, and only by comparing the memory 205's data signaloutput in synchronization with both the rising and falling edges of theclock signal CK1 of the DDR memory with the expected value at the risingtiming of the clock CK2, effects similar to those of this embodiment canbe obtained.

As described above, in the semiconductor integrated circuit and thememory test method in accordance with the above-mentioned embodiments ofthe present invention, by switching the input data depending on thelogical value of the clock of the BIST circuit, a test pattern can beapplied at the actual operation speed of the memory 205, even when theBIST circuit operates at half the clock frequency of the memory 205.

In addition, in the comparison with the expected value, the data outputfrom the memory 205 is held by the memory device 602 and compared withthe expected value together with the data to be output next, whereby thecomparison with the expected value can be carried out at the actualoperation speed of the memory by using the expected value comparisonsection 601 operating at half the clock frequency of the memory.

Furthermore, also in the case of a high-speed memory, such as a DDRmemory, operating in synchronization with both the rising and fallingedges of the clock, the DDR memory can be tested at its actual operationspeed by operating the BIST circuit at the same clock frequency as thatof the DDR memory.

Sixth Embodiment

FIG. 23 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a sixth embodimentof the present invention.

The semiconductor integrated circuit differs from the semiconductorintegrated circuit shown in FIG. 1 in that the circuit is equipped witha delay circuit 106 for generating a delay clock CK2′ obtained bydelaying the second clock CK2. The configuration and the operation ofthis delay circuit 106 are similar to those of the delay circuit 206 inaccordance with the third embodiment. Since the delay circuit 106 isprovided, operations and effects similar to those of the thirdembodiment can be obtained.

A specific example of the delay circuit 106 is similar to that explainedin the third embodiment and is shown in FIG. 24 or FIG. 25.

Seventh Embodiment

FIG. 26 is a block diagram illustrating a semiconductor integratedcircuit and a memory test method in accordance with a seventh embodimentof the present invention.

The semiconductor integrated circuit differs from the semiconductorintegrated circuit shown in FIG. 1 in that the circuit is equipped witha clock selection section 107. The configuration and the operation ofthe clock selection section 107 are similar to those of the clockselection section 207 in accordance with the fourth embodiment. Sincethe clock selection section 107 is provided, operations and effectssimilar to those of the fourth embodiment can be obtained.

Instead of the clock selection section 107, a clock selection section108 shown in FIG. 27 may be used. This clock selection section 108 isthe same as that explained in the fourth embodiment.

1. A semiconductor integrated circuit comprising: a memory operating ona first clock, a test pattern generation section, operating on a secondclock having half the frequency of said first clock, for generatingfirst test data, an LSB0 processing section for generating second testdata by adding numeric value 0 to said first test data generated by saidtest pattern generation section as the least significant bit thereof, anLSB1 processing section for generating third test data by adding numericvalue 1 to said first test data generated by said test patterngeneration section as the least significant bit thereof, a test dataselection section for selectively outputting either said second or thirdtest data being output from said LSB0 processing section or said LSB1processing section, respectively, depending on the signal value of saidsecond clock, thereby inputting the selected test data to said memory asfourth test data, and a delay circuit for generating a delay clockobtained by delaying said second clock and for supplying said delayclock to said test data selection section.
 2. A semiconductor integratedcircuit comprising: a memory operating on a first clock, a test patterngeneration section, operating on a second clock having half thefrequency of said first clock, for generating first test data, an LSB0processing section for generating second test data by adding numericvalue 0 to said first test data generated by said test patterngeneration section as the least significant bit thereof, an LSB1processing section for generating third test data by adding numericvalue 1 to said first test data generated by said test patterngeneration section as the least significant bit thereof, a clockselection section capable of selecting either said second clock or theinverted clock of said second clock, and a test data selection sectionfor selectively outputting either said second or third test data beingoutput from said LSB0 processing section or said LSB1 processingsection, respectively, depending on the output of said clock selectionsection, thereby inputting the selected test data to said memory asfourth test data.
 3. A semiconductor integrated circuit comprising: adouble data rate memory operating on a first clock, a test patterngeneration section, operating on a second clock having the samefrequency as that of said first clock, for generating first test data,an LSB0 processing section for generating second test data by addingnumeric value 0 to said first test data generated by said test patterngeneration section as the least significant bit thereof, an LSB1processing section for generating third test data by adding numericvalue 1 to said first test data generated by said test patterngeneration section as the least significant bit thereof, and a test dataselection section for selectively outputting either said second or thirdtest data being output from said LSB0 processing section or said LSB1processing section, respectively, depending on the signal value of saidsecond clock, thereby inputting the selected test data to said doubledata rate memory as fourth test data.
 4. A semiconductor integratedcircuit in accordance with claim 3, wherein a delay circuit forgenerating a delay clock obtained by delaying said second clock and forsupplying said delay clock to said test data selection section isprovided.
 5. A semiconductor integrated circuit comprising: a doubledata rate memory operating on a first clock, a test pattern generationsection, operating on a second clock having the same frequency as thatof said first clock, for generating first test data, an LSB0 processingsection for generating second test data by adding numeric value 0 tosaid first test data generated by said test pattern generation sectionas the least significant bit thereof, an LSB1 processing section forgenerating third test data by adding numeric value 1 to said first testdata generated by said test pattern generation section as the leastsignificant bit thereof, a clock selection section capable of selectingeither said second clock or the inverted clock of said second clock, anda test data selection section for selectively outputting either saidsecond or third test data being output from said LSB0 processing sectionor said LSB1 processing section, respectively, depending on the outputof said clock selection section, thereby inputting the selected testdata to said double data rate memory as fourth test data.
 6. A method oftesting a memory operating on a first clock, comprising the steps ofholding first data being output from said memory in synchronization withsaid first clock as second data depending on a second clock having halfthe frequency of said first clock, and respectively comparing saidsecond data and third data being output in synchronization with saidfirst clock from said memory immediately after the output of said firstdata with a predetermined expected value depending on said second clock.7. A method of testing a double data rate memory operating on a firstclock, comprising the steps of generating first test data depending on asecond clock having the same frequency as that of said first clock,generating second test data by adding numeric value 0 to said first testdata as the least significant bit thereof, generating third test data byadding numeric value 1 to said first test data as the least significantbit thereof, selecting either said second or third test data dependingon the signal value of said second clock, and inputting the selectedtest data to said double data rate memory.
 8. A method of testing adouble data rate memory operating on a first clock, comprising the stepsof holding first data being output from said double data rate memory insynchronization with said first clock as second data depending on asecond clock having the same frequency as that of said first clock, andrespectively comparing said second data and third data being output insynchronization with said first clock from said double data rate memoryimmediately after the output of said first data with a predeterminedexpected value depending on said second clock.
 9. A semiconductorintegrated circuit comprising: a memory operating on a first clock, afirst test pattern generation section, operating on a second clockhaving half the frequency of said first clock, for generating first testdata, a second test pattern generation section, operating on a thirdclock, the inverted clock of said second clock, for generating secondtest data, a clock selection section capable of selecting either saidsecond clock or the inverted clock of said second clock, and a test dataselection section for selectively outputting either said first or secondtest data being output from said first test pattern generation sectionor said second test pattern generation section, respectively, dependingon the output of said clock selection section, thereby inputting theselected test data to said memory as third test data.
 10. Asemiconductor integrated circuit comprising: a memory operating on afirst clock, a first test pattern generation section, operating on asecond clock having half the frequency of said first clock, forgenerating first test data, a second test pattern generation section,operating on said second clock, for generating second test data, a clockselection section capable of selecting either said second clock or theinverted clock of said second clock, and a test data selection sectionfor selectively outputting either said first or second test data beingoutput from said first test pattern generation section or said secondtest pattern generation section, respectively, depending on the outputof said clock selection section, thereby inputting the selected testdata to said memory as third test data.
 11. A semiconductor integratedcircuit comprising: a double data rate memory operating on a firstclock, a first test pattern generation section, operating on a secondclock having the same frequency as that of said first clock, forgenerating first test data, a second test pattern generation section,operating on a third clock, the inverted clock of said second clock, forgenerating second test data, a clock selection section capable ofselecting either said second clock or the inverted clock of said secondclock, and a test data selection section for selectively outputtingeither said first or second test data being output from said first testpattern generation section or said second test pattern generationsection, respectively, depending on the output of said clock selectionsection, thereby inputting the selected test data to said double datarate memory as third test data.
 12. A semiconductor integrated circuitcomprising: a double data rate memory operating on a first clock, afirst test pattern generation section, operating on a second clockhaving the same frequency as that of said first clock, for generatingfirst test data, a second test pattern generation section, operating onsaid second clock, for generating second test data, a clock selectionsection capable of selecting either said second clock or the invertedclock of said second clock, and a test data selection section forselectively outputting either said first or second test data beingoutput from said first test pattern generation section or said secondtest pattern generation section, respectively, depending on the outputof said clock selection section, thereby inputting the selected testdata to said double data rate memory as third test data.